IXTQ69N30P IXYS, IXTQ69N30P Datasheet - Page 4
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IXTQ69N30P
Manufacturer Part Number
IXTQ69N30P
Description
MOSFET N-CH 300V 69A TO-3P
Manufacturer
IXYS
Series
PolarHT™r
Datasheet
1.IXTQ69N30P.pdf
(5 pages)
Specifications of IXTQ69N30P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
49 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
69A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4960pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.049 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
69 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
69
Rds(on), Max, Tj=25°c, (?)
0.049
Ciss, Typ, (pf)
4960
Qg, Typ, (nc)
156
Trr, Typ, (ns)
330
Pd, (w)
500
Rthjc, Max, (k/w)
0.25
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
100
90
80
70
60
50
40
30
20
10
200
180
160
140
120
100
0
80
60
40
20
0
4
0
0.4
T
0.5
5
J
4.5
f = 1MHz
= 125ºC
Fig. 11. Capacitance
Fig. 9. Source Current vs.
Fig. 7. Input Adm ittance
T
-40ºC
Source-To-Drain Voltage
25ºC
0.6
J
10
= 125ºC
0.7
5
V
15
V
V
G S
S D
D S
0.8
- Volts
5.5
- Volts
20
- Volts
T
J
0.9
= 25ºC
25
C iss
C oss
6
C rss
1
30
1.1
6.5
35
1.2
1.3
40
7
1000
100
10
100
10
1
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0
10
0
0
R
DS
T
V
I
I
J
(on)
D
G
20
DS
Fig. 12. Forw ard-Bias Safe
= -40ºC
Fig. 8. Transconductance
= 34.5A
= 10mA
125ºC
20
DC
Limit
25ºC
= 150V
Fig. 10. Gate Charge
40
Operating Area
40
Q
10ms
G
60
I
- nanoCoulombs
V
D
D S
60
- Amperes
1ms
100
- Volts
80
80
IXTQ 69N30P
IXTT 69N30P
100
25µs
100
T
120
C
= 25ºC
120
140
1000
140
160