IXTH360N055T2 IXYS, IXTH360N055T2 Datasheet - Page 2

• Manufacturer Part Number: IXTH360N055T2
• Description: MOSFET N-CH 55V 360A TO-247
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTH360N055T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 360A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Input Capacitance (ciss) @ Vds: 20000pF @ 25V
• Power - Max: 935W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 360
• Rds(on), Max, Tj=25°c, (?): 0.0024
• Ciss, Typ, (pf): 20000
• Qg, Typ, (nc): 330
• Trr, Typ, (ns): 78
• Pd, (w): 935
• Rthjc, Max, (k/w): 0.16
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCH
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
Repetitive, Pulse Width Limited by T
V
V
I
Test Conditions
Gate Input Resistance
Resistive Switching Times
V
R
TO-247
Test Conditions
I
-di/dt = 100A/μs
V
V
F
F
DS
GS
GS
GS
R
G
GS
= 100A, V
= 150A, V
= 27V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 0V, V
= 0V
= 10V, V
= 2Ω (External)
= 10V, V
DS
D
GS
GS
DS
= 60A, Note 1
DS
= 25V, f = 1MHz
= 0V, Note 1
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 100A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
65
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
2650
Typ.
Typ.
480
330
0.21
110
164
1.6
4.2
20
76
87
78
30
62
56
23
Max.
Max.
1440
0.16 °C/W
360
1.3
6,404,065 B1
6,534,343
6,583,505
°C/W
nC
nC
nC
nF
pF
pF
nC
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 Outline
TO-247 (IXTH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXTH360N055T2
IXTT360N055T2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216