IRF1010EL International Rectifier, IRF1010EL Datasheet - Page 3

• Manufacturer Part Number: IRF1010EL
• Description: MOSFET N-CH 60V 84A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010EL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3210pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1010EL

www.irf.com
1000
1000
100
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
1
0.1
4

TOP
BOTTOM
V
5
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
6

T = 25 C
1
J
7
4.5V
°


8
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS

T = 175 C
10
= 25V
J
9
°
°
10
100
11
IRF1010ES/IRF1010EL
1000
100
Fig 2. Typical Output Characteristics
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0

TOP
BOTTOM

I =
D
V
84A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
4.5V

20µs PULSE WIDTH
T = 175 C
J
10

°
V
°
GS
=
10V
3
100