IXFH20N80P IXYS, IXFH20N80P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH20N80P
Manufacturer Part Number
IXFH20N80P
Description
MOSFET N-CH 800V 20A TO-247
Specifications of IXFH20N80P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
4685pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.52 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
20
Rds(on), Max, Tj=25°c, (?)
0.52
Ciss, Typ, (pf)
4685
Qg, Typ, (nc)
86
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
© 2006 IXYS All rights reserved
GSS
DSS
D25
DM
AR
C
GS(th)
J
JM
stg
L
SOLD
DS(on)
DGR
GSS
GSM
AR
D
DSS
AS
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
Maximum lead temperature for soldering
Plastic case for 10 s
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220 types
V
S
GS
GS
C
C
C
C
C
C
DS
GS
DS
J
J
J
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ± 30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
HiPerFET
DSS
, I
D
D
DC
D
= 250 µA
= 4 mA
= 10 A
, V
G
= 4 Ω
DS
= 0
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
,
IXFH 20N80P
IXFT 20N80P
IXFV 20N80P
IXFV 20N80PS
800
Min. Typ.
3.0
Characteristic Values
1..65 / 2.5..15
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
± 30
± 40
800
800
500
150
300
260
1.0
5.5
20
50
10
30
10
± 200
6
4
1000
520
Max.
5.0
25
N/lb
V/ns
m Ω
°C
°C
mJ
nA
µA
µA
°C
°C
°C
W
g
g
g
V
V
V
V
V
V
A
A
A
J
TO-268 (IXFT)
PLUS220 SMD(IXFV..S)
G = Gate
S = Source
Features
l
l
l
l
Advantages
l
l
l
TO-247 (IXFH)
PLUS220 (IXFV)
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
G
DS(on)
DSS
D
G
G
S
S
D
Tab = Drain
S
≤ ≤ ≤ ≤ ≤ 520 m Ω Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250 ns
= 800
=
= Drain
DS99511E(03/06)
20
D (TAB)
D (TAB)
D (TAB)
(TAB)
A
V
Related parts for IXFH20N80P
IXFH20N80P Summary of contents
... GSS DSS DS DSS DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS Maximum Ratings 800 = 1 MΩ 800 GS ± 30 ± 1.0 ≤ DSS 500 -55 ... +150 150 -55 ...
... I SD Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 (T = 25° C unless otherwise specified pulse test ...
... olts D S Fig Nor m alize d to DS(on 10A V alue vs . Drain Curre nt D 2.6 2 10V GS 2.2 2 1.8 1.6 1.4 1 mperes D © 2006 IXYS All rights reserved º º C 2.6 = 10V 2.4 7V 2.2 1.8 6V 1.6 1.4 1.2 0.8 5V 0.6 0 º 125 ...
... T = 125 0.4 0.5 0.6 0.7 0 olts S D Fig. 11. Capacitance 10000 1000 100 f = 1MH olts D S IXYS reserves the right to change limits, test conditions, and dimensions 5.25 5.5 5. º 0.9 1 1.1 1.2 Fig. 12. M axim um Tr ans ie nt The ...
... Q 5.89 6.40 0.232 R 4.32 5.49 .170 S 6.15 BSC 242 PLUS220 (IXFV) Outline © 2006 IXYS All rights reserved Package Outline Drawings Max. .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 ...
Related keywords
ixfh26n50 ixfh24n50 ixfh21n50 ixfh20n60 ixfh26n50q ixfh20n80 ixfh26n60q ixfh26n50p ixfh20n80q ixfh20n100p IXFH20N80P datasheet IXFH20N80P data sheet IXFH20N80P pdf datasheet IXFH20N80P component IXFH20N80P part IXFH20N80P distributor IXFH20N80P RoHS IXFH20N80P datasheet download
