IRFB4410PBF International Rectifier, IRFB4410PBF Datasheet - Page 3

• Manufacturer Part Number: IRFB4410PBF
• Description: MOSFET N-CH 100V 96A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4410PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5150pF @ 50V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 88 A
• Gate Charge, Total: 120 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 55 ns
• Time, Turn-on Delay: 24 ns
• Transconductance, Forward: 120 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 96 A
• Mounting Style: Through Hole
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB4410PBF

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
100
0.1
0.1
10
10
1
1
0.1
Fig 3. Typical Transfer Characteristics
2
1
Fig 1. Typical Output Characteristics
T J = 175°C
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4
4.5V
1
C rss
C oss
C iss
5
T J = 25°C
f = 1 MHZ
V DS = 25V
≤60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
10
10
6
7
TOP
BOTTOM
100
8
9
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
100
10
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
3.0
2.5
2.0
1.5
1.0
0.5
10
1
0.1
-60 -40 -20 0
0
Fig 2. Typical Output Characteristics
I D = 58A
I D = 58A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
20
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
1
4.5V
V DS = 80V
V DS = 50V
V DS = 20V
40
20 40 60 80 100 120 140 160 180
≤ 60µs PULSE WIDTH
Tj = 175°C
10
60
80
TOP
BOTTOM
100
100
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
120
3