IRFB4310ZGPBF International Rectifier, IRFB4310ZGPBF Datasheet
IRFB4310ZGPBF
Specifications of IRFB4310ZGPBF
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IRFB4310ZGPBF Summary of contents
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... HEXFET Power MOSFET V 100V D DSS R typ. 4.8m DS(on) max. 6.0m I 127A D (Silicon Limited) I 120A D (Package Limited TO-220AB IRFB4310ZGPbF D S Drain Source Max. 127 90 120 560 250 1.7 ± - 175 300 x x 10lb in (1.1N m) 130 See Fig. 14, 15, 22a, 22b, Typ ...
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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
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VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 10 4.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...
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175°C 100 25° 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 140 LIMITED BY ...
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D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 10 Allowed avalanche Current vs avalanche 1 ...
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Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 400 500 600 ...
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D.U.T + - • • • • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % ...
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TO-220AB packages are not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Data and specifications subject to change without notice. This product has been designed and qualified for ...