IXTT50P085 IXYS, IXTT50P085 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTT50P085
Manufacturer Part Number
IXTT50P085
Description
MOSFET P-CH 85V 50A TO-268
Specifications of IXTT50P085
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
55 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
TO-268
Vdss, Max, (v)
-85
Id(cont), Tc=25°c, (a)
-50
Rds(on), Max, Tj=25°c, (?)
0.055
Ciss, Typ, (pf)
4200
Qg, Typ, (nc)
150
Trr, Typ, (ns)
180
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2005 IXYS All rights reserved
P-Channel Enhancement Mode
Avalanche Rated
Standard Power MOSFET
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
M
Weight
Symbol
V
V
I
I
R
AR
D25
DM
GSS
DSS
JM
GSM
AR
J
stg
GS(th)
DSS
DGR
GS
D
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic Body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
C
C
C
C
C
J
J
GS
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= -10 V, I
GS
, I
D
D
DC
= -250 µA
= -250 µA
DSS
D
, V
= 0.5 • I
DS
= 0
GS
D25
= 1 MΩ
T
T
(T
J
J
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
J
min.
IXTH 50P085
IXTT 50P085
-3.0
-85
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
-200
±20
±30
300
150
300
250
-85
-85
-50
-50
30
6
5
±100
max.
-5.0
-25
55
-1
mΩ
mA
mJ
µA
° C
° C
° C
nA
°C
°C
W
V
V
V
V
V
A
A
A
V
g
g
Features
•
•
•
•
•
Applications
•
•
•
•
Advantages
•
•
•
TO-268 (IXTT)
G = Gate,
S = Source,
V
I
R
TO-247 (IXTH)
D25
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
DSS
DS(on)
DS (on)
G
= -85 V
= -50 A
= 55 mΩ Ω Ω Ω Ω
HDMOS
S
D = Drain,
TAB = Drain
TM
DS99140B(02/05)
process
D (TAB)
D (TAB)
Related parts for IXTT50P085
IXTT50P085 Summary of contents
... ± GSS 0.8 • V DSS DS DSS - 0.5 • I DS(on © 2005 IXYS All rights reserved IXTH 50P085 IXTT 50P085 Maximum Ratings - MΩ -85 GS ±20 ±30 -50 -200 J -50 30 300 -55 ... +150 150 -55 ... +150 300 250 1.13/10 Nm/lb.in Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... V - Volts D S Fig Norm alize DS(on) Value 2 -10V 2 1.8 1.6 1.4 1.2 1 0.8 0 -25 - Amperes D © 2005 IXYS All rights reserved -140 -120 -8V -100 -80 -7V -60 -40 -6V -20 -5V 0 -1.5 -2 -2.5 2 1.8 -8V 1.6 1.4 -7V 1.2 -6V 1 0.8 -5V 0 D25 D -55 ...
Fig. 7. Input Adm ittance -150 -125 T = -40ºC J -100 25ºC 125ºC -75 -50 - Volts G S Fig. 9. Source Current vs. Source-To- Drain Voltage -150 -125 -100 -75 ...
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