IXFH16N80P IXYS, IXFH16N80P Datasheet - Page 3

• Manufacturer Part Number: IXFH16N80P
• Description: MOSFET N-CH 800V 16A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH16N80P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 4600pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 460 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 16
• Rds(on), Max, Tj=25°c, (?): 0.6
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 70
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 460
• Rthjc, Max, (ºc/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
50
45
40
35
30
25
20
15
10
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
16
14
12
10
16
14
12
10
5
0
2
1
8
6
4
2
0
8
6
4
2
0
4
0
0
0
V
Fig. 5. R
GS
2
1
2
4.5
= 10V
4
T
Fig. 7. Input Adm ittance
Fig. 1. Output Characteristics
2
Fig. 3. Output Characteristics
4
J
DS(on)
= 125
6
-40
5
25
3
6
vs. Drain Current
º
º
8
º
V
Normalized to I
C
C
I
C
D
V
V
G S
5.5
4
8
DS
DS
- Amperes
10
@ 125ºC
@ 25ºC
- Volts
- Volts
- Volts
10
V
12
5
GS
V
6
GS
= 10V
14
12
7V
6V
5V
6
= 10V
T
T
J
7V
6V
5V
J
16
= 125ºC
D
= 25ºC
6.5
14
7
= 8A Value
18
16
8
20
7
18
9
22
7.5
10
20
24
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
24
22
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
1
8
6
4
2
0
50
45
40
35
30
25
20
15
10
-50
-50
0
5
0
0
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
T
2
GS
J
-25
-25
= -40
Fig. 6. Maximum Drain Current vs.
IXFH 16N80P
= 10V
125
5
IXFV 16N80P IXFV 16N80PS
25
Fig. 8. Transconductance
4
º
º
º
vs. Junction Temperature
10
DS(on)
C
C
0
C
0
T
J
T
6
- Degrees Centigrade
Case Temperature
C
15
- Degrees Centigrade
V
Normalized to I
25
25
V
GS
8
I
DS
D
@ 25ºC
20
= 10V
- Volts
- Amperes
I
D
7V
5V
10
50
6V
50
= 16A
25
12
75
75
30
IXFT 16N80P
D
I
14
D
= 8A Value
35
= 8A
100
100
16
40
125
125
18
45
150
150
20
50