IXTH3N120 IXYS, IXTH3N120 Datasheet - Page 4

• Manufacturer Part Number: IXTH3N120
• Description: MOSFET N-CH 1200V 3A TO-247
• Manufacturer: IXYS

Specifications of IXTH3N120

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 3
• Rds(on), Max, Tj=25°c, (?): 4.5
• Ciss, Typ, (pf): 1050
• Qg, Typ, (nc): 39
• Trr, Typ, (ns): 700
• Pd, (w): 100
• Rthjc, Max, (k/w): 0.8
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
12
10
8
6
4
2
0
1.00
0.10
0.01
0.00
5
4
3
2
1
0
0
Fig. 7 Gate Charge Characteristic Curve
0.2
Fig. 9 Drain Current vs Drain to Source Voltage
10
V
-4
GS
10
= 0V
V
I
DS
D
= 1.5A
0.4
= 600V
Gate Charge - nC
20
T
J
= 125
V
SD
O
30
C
- Volts
0.6
10
-3
40
0.8
50
T
J
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
= 25
O
C
Fig.10 Transient Thermal Impedance
60
1.0
10
Pulse Width - Seconds
-2
1000
100
10
Fig. 8 Capacitance Curves
0
10
-1
5
10
15
V
DS
Ciss
- Volts
20
Coss
Crss
10
0
25
IXTH 3N120
Single Pulse
30
f = 1MHz
6,534,343
35
40
10
1