IXTH140P05T IXYS, IXTH140P05T Datasheet - Page 4

• Manufacturer Part Number: IXTH140P05T
• Description: MOSFET P-CH 50V 140A TO-247
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTH140P05T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 140A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 13500pF @ 25V
• Power - Max: 298W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): -50
• Id(cont), Tc=25°c, (a): -140
• Rds(on), Max, Tj=25°c, (?): 0.009
• Ciss, Typ, (pf): 13500
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): 53
• Trr, Max, (ns): -
• Pd, (w): 298
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
-180
-160
-140
-120
-100
-300
-250
-200
-150
-100
100
-80
-60
-40
-20
-50
0
0
-2.5
-0.4
0
f
-0.5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-3.0
-5
-0.6
-3.5
-10
T
-0.7
J
= 125ºC
Fig. 7. Input Admittance
Fig. 11. Capacitance
-0.8
-4.0
-15
V
DS
V
V
-0.9
GS
SD
- Volts
-4.5
-20
- Volts
- Volts
T
J
-1.0
= 125ºC
T
- 40ºC
J
25ºC
= 25ºC
C oss
C rss
C iss
-5.0
-25
-1.1
-1.2
-5.5
-30
-1.3
-6.0
-35
-1.4
-6.5
-1.5
-40
-
1,000
-
100
110
100
-
-10
-
10
90
80
70
60
50
40
30
20
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
1
0
0
-
1
0
0
R
V
I
I
External Lead
Current Limit
T
T
Single Pulse
D
G
DS
DS(on)
J
C
20
-20
= - 70A
= -1mA
= 150ºC
= 25ºC
= - 25V
Fig. 12. Forward-Bias Safe Operating Area
Limit
IXTA140P05T IXTP140P05T
40
-40
Fig. 8. Transconductance
60
-60
Fig. 10. Gate Charge
Q
I
D
80
G
- Amperes
- NanoCoulombs
-80
V
DS
-
100
10
- Volts
-100
120
IXTH140P05T
-120
140
-140
T
160
J
= - 40ºC
125ºC
-160
25µs
100µs
1ms
10ms
100ms
DC
25ºC
180
-
-180
100
200