IXTV22N60PS IXYS, IXTV22N60PS Datasheet - Page 5

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IXTV22N60PS

Manufacturer Part Number
IXTV22N60PS
Description
MOSFET N-CH 600V 22A PLUS220-SMD
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXTV22N60PS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
400W
Mounting Type
Surface Mount
Package / Case
PLUS-220SMD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Forward Transconductance Gfs (max / Min)
21 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.35
Ciss, Typ, (pf)
3600
Qg, Typ, (nc)
62
Trr, Typ, (ns)
500
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
PLUS220 SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXTQ 22N60P
IXTV 22N60P
IXTV 22N60PS
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e
1 . 0 0
0 . 1 0
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - millis e c o n d s
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