IXFV52N30PS IXYS, IXFV52N30PS Datasheet - Page 4

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IXFV52N30PS

Manufacturer Part Number
IXFV52N30PS
Description
MOSFET N-CH 300V 52A PLUS220-S
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXFV52N30PS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
66 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
52A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3490pF @ 25V
Power - Max
400W
Mounting Type
Surface Mount
Package / Case
PLUS-220SMD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.066 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
52 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
52
Rds(on), Max, Tj=25°c, (?)
0.066
Ciss, Typ, (pf)
3490
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.31
Package Style
PLUS220 SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFV52N30PS
Manufacturer:
RENESAS
Quantity:
2 155
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
160
140
120
100
100
90
80
70
60
50
40
30
20
10
80
60
40
20
0
0
4.0
0.4
0
0.5 0.6
4.5
5
f = 1MHz
T
J
Fig. 11. Capacitance
= 125ºC
Fig. 7. Input Admittance
Fig. 9. Source Current vs.
5.0
Source-To-Drain Voltage
10
T
J
0.7
= 125ºC
-40ºC
25ºC
5.5
15
V
V
0.8
V
G S
S D
D S
- Volts
- Volts
6.0
0.9 1.0
20
- Volts
T
J
= 25ºC
6.5
25
C
C
C
1.1
oss
rss
iss
7.0
30
1.2 1.3
7.5
35
1.4
8.0
40
1000
100
60
55
50
45
40
35
30
25
20
15
10
10
10
5
0
1
9
8
7
6
5
4
3
2
1
0
10
0
0
R
10 20 30 40 50 60 70 80 90 10
DS
10
V
I
I
D
G
IXFH52N30P IXFV52N30P
DS
(on)
= 26A
= 10m A
Fig. 12. Forward-Bias Safe
Fig. 8. Transconductance
= 150V
20
Lim it
Fig. 10. Gate Charge
30
Operating Area
Q
DC
G
I
40
V
- nanoCoulombs
D
D S
- Amperes
100
50
- Volts
60
IXFV52N30PS
IXYS REF: T_52N30P(6S)3-14-06-C
T
70
J
= - 40ºC
125ºC
T
T
Single Pulse
25µs
1m s
10ms
100ms
25ºC
80
J
J
= 25ºC
= 150ºC
0
90
11
0
1000
100
12
0

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