IRFS3004-7PPBF International Rectifier, IRFS3004-7PPBF Datasheet - Page 3

MOSFET N-CH 40V 240A D2PAK-7

IRFS3004-7PPBF

Manufacturer Part Number
IRFS3004-7PPBF
Description
MOSFET N-CH 40V 240A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFS3004-7PPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.25 mOhm @ 195A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
240A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
9130pF @ 25V
Power - Max
380W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
400 A
Power Dissipation
380 W
Mounting Style
SMD/SMT
Gate Charge Qg
160 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFS3004-7PPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IRFS3004-7PPBF
Quantity:
1 200
www.irf.com
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
100
0.1
0.1
10
10
1
1
0.1
Fig 3. Typical Transfer Characteristics
3
1
Fig 1. Typical Output Characteristics
T J = 175°C
C oss
V DS , Drain-to-Source Voltage (V)
C iss
C rss
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
4.5V
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4
1
5
T J = 25°C
f = 1 MHZ
10
10
V DS = 25V
≤60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
6
TOP
BOTTOM
100
7
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
100
8
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
14.0
12.0
10.0
100
2.0
1.5
1.0
0.5
8.0
6.0
4.0
2.0
0.0
10
-60 -40 -20 0 20 40 60 80 100120140160180
0.1
0
Fig 2. Typical Output Characteristics
I D = 195A
V GS = 10V
I D = 180A
4.5V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
50
Q G , Total Gate Charge (nC)
1
V DS = 32V
V DS = 20V
100
10
≤ 60µs PULSE WIDTH
Tj = 175°C
150
TOP
BOTTOM
100
200
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
250
3

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