IRFP4710PBF International Rectifier, IRFP4710PBF Datasheet
IRFP4710PBF
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IRFP4710PBF Summary of contents
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... Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Notes through … are on page 8 www.irf.com IRFP4710PbF HEXFET Power MOSFET V R DSS 100V Max. @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– ...
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... IRFP4710PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...
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... Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 9.0 10.0 -60 -40 -20 0 Fig 4. Normalized On-Resistance IRFP4710PbF VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V 6.0V 6.0V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 75A ...
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... IRFP4710PbF 10000 0V MHZ C iss = rss = C gd 8000 C oss = Ciss 6000 4000 2000 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 175 C ° 0.1 0.0 0.4 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 0 Fig 6. Typical Gate Charge Vs. ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP4710PbF + - ≤ 1 ≤ 0 d(on) r d(off Notes: 1. Duty factor ...
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... IRFP4710PbF D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 350 15V 300 DRIVER 250 + 200 150 100 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Fig 13b ...
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... Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs IRFP4710PbF + - V =10V ...
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... IRFP4710PbF 15.90 (.626) 15.30 (.602 20.30 (.800) 19.70 (.775 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079 5.45 (.215) 3.40 (.133) 2X 3.00 (.118) EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates " ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...