IXTC13N50 IXYS, IXTC13N50 Datasheet
IXTC13N50
Manufacturer Part Number
IXTC13N50
Description
MOSFET N-CH 500V 12A ISOPLUS220
Manufacturer
IXYS
Datasheet
1.IXTC13N50.pdf
(2 pages)
Specifications of IXTC13N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
13
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
110
Trr, Typ, (ns)
600
Pd, (w)
140
Rthjc, Max, (k/w)
0.9
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power MOSFET
ISOPLUS220
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dv/dt, Low t
Preliminary Data Sheet
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
Weight
GSS
DSS
DM
D25
AR
DSS
GS(th)
DS(on)
J
JM
stg
L
DGR
GS
GSM
AR
D
DSS
Test Conditions
V
V
V
V
V
Notes 1, 2
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
S
GS
GS
DS
DS
GS
C
C
C
C
C
J
J
J
GS
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
rr
GS
, HDMOS
, di/dt ≤ 100 A/µs, V
, I
D
D
DC
TM
D
= 250 µA
= 2.5 mA
DSS
, V
= I
G
= 2 Ω
DS
T
= 0
TM
GS
Family
= 1 MΩ
DD
T
T
(T
J
J
J
≤ V
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
JM
,
min.
500
Characteristic Values
IXTC 13N50
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
500
500
±20
±30
140
150
300
12
48
13
18
max.
±100
5
3
200
0.4
4
1 mA
V/ns
mJ
µA
°C
°C
°C
°C
W
nA
Ω
V
V
A
A
V
V
V
V
A
g
Features
Applications
Advantages
See IXFH13N50 data sheet for
characteristic curves
ISOPLUS220
G = Gate
S = Source
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
AC motor control
V
I
R
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly: no screws or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
D25
DSS
DS(on)
G
DS (on)
D
S
HDMOS
TM
= 500 V
= 12 A
= 0.4 Ω Ω Ω Ω Ω
D = Drain
Isolated back surface*
TM
DS98823B(07/03)
process
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IXTC13N50 Summary of contents
Page 1
... ± GSS 0.8 • V DSS DS DSS DS(on Notes 1, 2 © 2003 IXYS All rights reserved IXTC 13N50 Family Maximum Ratings 500 = 1 MΩ 500 GS ±20 ± ≤ DSS 140 -55 ... +150 150 -55 ... +150 300 3 Characteristic Values (T = 25°C, unless otherwise specified) J min. ...
Page 2
... Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ test current 6. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. ...