IXFH22N60P IXYS, IXFH22N60P Datasheet - Page 3

• Manufacturer Part Number: IXFH22N60P
• Description: MOSFET N-CH 600V 22A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH22N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5.5V @ 4mA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 22
• Rds(on), Max, Tj=25°c, (?): 0.35
• Ciss, Typ, (pf): 3600
• Qg, Typ, (nc): 58
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 400
• Rthjc, Max, (ºc/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
22
20
18
16
14
12
10
22
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
3
2
1
0
0
0
V
GS
I
2
1
D
5
Fig. 3. Output Characte ris tics
Fig. 5. R
= 11A V alue vs . Dr ain Curr e nt
Fig. 1. Output Characte ris tics
= 10V
4
10
2
6
15
3
DS(on)
V
I
D S
V
D
8
@ 125
D S
- A mperes
@ 25
V
20
4
- V olts
GS
Nor m alize d to
V
10
- V olts
GS
= 10V
25
º
º
5
8V
7V
C
C
= 10V
12
T
8V
J
= 125
30
6
6.5V
6V
5.5V
5V
14
7.5V
7V
6V
T
J
º
35
7
C
= 25
16
º
18
C
40
8
20
45
9
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
24
20
16
12
45
40
35
30
25
20
15
10
8
4
0
1
5
0
-50
-50
Fig. 2. Exte nde d Output Characte ris tics
0
Fig. 4. R
V
V alue vs . Junction Te m pe rature
GS
-25
3
-25
IXFH 22N60P IXFV22N60P
Fig. 6. Drain Curre nt vs . Cas e
= 10V
6
T
DS(on
0
0
T
C
V
J
- Degrees Centigrade
GS
9
- Degrees Centigrade
Te m pe rature
IXFV 22N60PS
)
25
25
= 10V
Norm alize d to I
12
V
@ 25
9V
8V
I
D S
D
= 22A
50
15
50
- V olts
º
C
18
75
75
I
7.5V
7V
6.5V
6V
21
D
100
100
= 11A
D
24
= 11A
125
125
27
150
150
30