IXTH130N20T IXYS, IXTH130N20T Datasheet - Page 4

• Manufacturer Part Number: IXTH130N20T
• Description: MOSFET N-CH 200V 130A TO-247
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXTH130N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 8800pF @ 25V
• Power - Max: 830W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 130
• Rds(on), Max, Tj=25°c, (?): 0.016
• Ciss, Typ, (pf): 8800
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): 150
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.18
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
160
140
120
100
300
250
200
150
100
80
60
40
20
50
100
0
0
3.4
0.4
0
0.5
3.8
f = 1 MHz
5
Fig. 9. Forward Voltage Drop of
0.6
4.2
Fig. 7. Input Admittance
10
Fig. 11. Capacitance
0.7
T
J
Intrinsic Diode
4.6
= 150ºC
15
V
V
V
0.8
SD
GS
DS
T
- Volts
J
- Volts
20
5
- Volts
= 150ºC
0.9
- 40ºC
25ºC
5.4
T
25
J
= 25ºC
1
5.8
30
1.1
C iss
C oss
C rss
6.2
35
1.2
6.6
1.3
40
1.00
0.10
0.01
0.00
180
160
140
120
100
80
60
40
20
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
15
20
D
G
DS
Fig. 12. Maximum Transient Thermal
0.0001
= 25A
= 10mA
= 100V
30
40
Fig. 8. Transconductance
Fig. 10. Gate Charge
45
0.001
Pulse Width - Seconds
60
Q
G
60
Impedance
- NanoCoulombs
I
D
80
- Amperes
0.01
75
100
90
IXTH130N20T
0.1
T
120
J
105
= - 40ºC
150ºC
25ºC
140
120
1
160
135
10
150
180