IRF1405PBF International Rectifier, IRF1405PBF Datasheet

MOSFET N-CH 55V 169A TO-220AB

IRF1405PBF

Manufacturer Part Number
IRF1405PBF
Description
MOSFET N-CH 55V 169A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRF1405PBF.pdf (9 pages)
2.IRF1405PBF.pdf (3 pages)

Specifications of IRF1405PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.3 mOhm @ 101A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
169A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
5480pF @ 25V
Power - Max
330W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
169 A
Gate Charge, Total
170 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
330 W
Resistance, Drain To Source On
4.6 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
130 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
69 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
133 A
Mounting Style
Through Hole
Gate Charge Qg
170 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1405PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF1405PBF
Manufacturer:
KYOCERA
Quantity:
12 000
Company:
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Part Number:
IRF1405PBF
Manufacturer:
IR
Quantity:
35 000
Company:
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Part Number:
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Manufacturer:
IR
Quantity:
20 000
Company:
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Part Number:
IRF1405PBF
0
Company:
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Part Number:
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1 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF1405PBF
Quantity:
2 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF1405PBF
Quantity:
28 000
Description
Typical Applications
l
l
l
l
l
l
l
l
This Stripe Planar design of HEXFET
utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this
HEXFET power MOSFET are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this
design an extremely efficient and reliable device for use in
a wide variety of applications.
Benefits
www.irf.com
Absolute Maximum Ratings
I
I
I
P
V
E
I
E
dv/dt
T
T
Thermal Resistance
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Industrial motor drive
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs
Parameter
Parameter
Ã
e
GS
GS
i
@ 10V
@ 10V
d
G
HEXFET
See Fig.12a, 12b, 15, 16
300 (1.6mm from case )
Typ.
IRF1405PbF
0.50
–––
–––
10 lbf
D
D
S
-55 to + 175
TO-220AB
y
Max.
169
118
in (1.1N
± 20
680
330
560
2.2
5.0
®
h
h
R
Power MOSFET
G
DS(on)
I
V
y
D
D
m)
Max.
S
DSS
0.45
–––
62
= 169A†
= 5.3mΩ
= 55V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

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IRF1405PBF Summary of contents

Page 1

... Mounting Torque, 6- screw Thermal Resistance R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G ® Power MOSFETs Parameter @ 10V GS @ 10V GS d à Parameter IRF1405PbF ® HEXFET Power MOSFET 55V DSS R = 5.3mΩ DS(on 169A† TO-220AB Max. Units h 169 h 118 ...

Page 2

Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 1 ...

Page 5

LIMITED BY PACKAGE 160 120 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

Duty Cycle = Single Pulse 100 10 1 1.0E-08 1.0E-07 Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 TOP Single Pulse BOTTOM 10% Duty Cycle 500 101A 400 300 200 100 100 Starting ...

Page 8

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent For N-channel 8 + • • ƒ • - „ - • • • P.W. Period D ...

Page 9

TO-220AB packages are not recommended for Surface Mount Application. Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ IR WORLD HEADQUARTERS: 233 Kansas ...

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