IXFH96N15P IXYS, IXFH96N15P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH96N15P
Manufacturer Part Number
IXFH96N15P
Description
MOSFET N-CH 150V 96A TO-247
Specifications of IXFH96N15P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
96A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 25V
Power - Max
480W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
96 A
Power Dissipation
480 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
96
Rds(on), Max, Tj=25°c, (?)
0.024
Ciss, Typ, (pf)
3500
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
480
Rthjc, Max, (ºc/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
F
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
C
GS(th)
DS(on)
© 2006 IXYS All rights reserved
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Mounting force
Mounting torque
TO-247
PLUS220
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 175° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 250 µA
= 4 mA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
(PLUS220)
(TO-247)
GS
= 1 MΩ
DD
T
J
≤ V
= 175° C
DSS
JM
IXFH 96N15P
IXFV 96N15P
IXFV 96N15PS
,
150
Min.
11...65/2.4...11
3.0
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
150
150
±20
±30
250
480
175
300
260
1.0
96
75
60
40
10
6
4
±100
1000
Max.
5.0
25
24
V/ns
N/lb
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
Features
l
l
l
Advantages
l
l
l
TO-247 (IXFH)
PLUS220 (IXFV)
PLUS220SMD (IXFV__S)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
G
G = Gate
S = Source
DS(on)
DSS
D
G
G
D
S
S
S
= 150
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤ 200 ns
D = Drain
TAB = Drain
96
24 mΩ Ω Ω Ω Ω
DS99208E(12/05)
(TAB)
D (TAB)
D (TAB)
A
V
Related parts for IXFH96N15P
IXFH96N15P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 96N15P IXFV 96N15P IXFV 96N15PS Maximum Ratings 150 = 1 MΩ 150 GS ±20 ± 250 1.0 ≤ DSS 480 -55 ... +175 175 -55 ...
... A, -di/dt = 100 A/µ 100 PLUS220SMD (IXFV__S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. , pulse test 35 ...
... V - Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3.8 3.4 3 2.6 2.2 1 15V GS 1 100 I - Amperes D © 2006 IXYS All rights reserved C 200 175 150 125 8V 100 1.5 2 2.5 C 2.8 2.6 2.4 2.2 8V 1.8 1.6 1.4 7V 1 ...
... J 0 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 1.2 1.4 1.6 1.8 1000 C iss 100 C oss C rss IXFH 96N15P IXFV 96N15P IXFV 96N15PS Fig. 8. Transconductance T = -40ºC ...
... Fig . © 2006 IXYS All rights reserved IXFV 96N15P IXFV 96N15PS illis IXFH 96N15P ...
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