IRFP260MPBF International Rectifier, IRFP260MPBF Datasheet - Page 2
![MOSFET N-CH 200V 49A TO-247AC](/photos/15/59/155907/irfp044npbf_sml.jpg)
IRFP260MPBF
Manufacturer Part Number
IRFP260MPBF
Description
MOSFET N-CH 200V 49A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFP260MPBF.pdf
(8 pages)
Specifications of IRFP260MPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
234nC @ 10V
Input Capacitance (ciss) @ Vds
4057pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
N Channel
Continuous Drain Current Id
50A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
40mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
50 A
Power Dissipation
300 W
Mounting Style
Through Hole
Gate Charge Qg
156 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP260MPBF
Manufacturer:
INFINEON
Quantity:
20 000
IRFP260MPbF
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
fs
D
S
(BR)DSS
GS(th)
SD
2
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature.
R
Starting T
G
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 1.5mH
AS
= 28A.
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
T
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
27
–––
–––
–––
–––
–––
–––
J
≤ 175°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ 28A di/d ≤ 486A/µs, V
4057 –––
0.26 –––
–––
––– 0.04
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
603
161
–––
–––
–––
268
1.9
5.0
13
17
60
55
48
–––
–––
–––
250
100
234
110
–––
–––
–––
–––
–––
–––
–––
200
402
4.0
1.3
2.8
25
38
50
V/°C
µA
nA
nC
ns
µC
pF
ns
nH
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
DD
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 28A
= 28A
= 25°C, I
= 25°C, I
= 1.8Ω
≤ V
= 0V, I
= 10V, I
= V
= 50V, I
= 200V, V
= 160V, V
= 20V
= -20V
= 160V
= 10V
= 100V
= 10V
= 0V
= 25V
(BR)DSS
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
Conditions
= 28A
= 28A, V
,
= 28A
= 250µA
= 28A
GS
GS
= 0V
= 0V, T
D
GS
= 1mA
www.irf.com
J
= 0V
G
= 150°C
G
S
+L
D
S
D
)
S
D