IXTQ22N60P IXYS, IXTQ22N60P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTQ22N60P
Manufacturer Part Number
IXTQ22N60P
Description
MOSFET N-CH 600V 22A TO-3P
Specifications of IXTQ22N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Forward Transconductance Gfs (max / Min)
21 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.35
Ciss, Typ, (pf)
3600
Qg, Typ, (nc)
62
Trr, Typ, (ns)
500
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Symbol
(T
BV
V
I
I
R
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
GSS
DSS
D25
AR
DM
GS(th)
DS(on)
AR
AS
J
JM
stg
L
SOLD
C
© 2005 IXYS All rights reserved
DSS
DGR
GS
GSM
D
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Tranisent
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
TO-3P
PLUS220 & PLUS220SMD
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
= 0.5 I
G
= 4 Ω
DS
= 0
D25
(TO-3P)
(PLUS 220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
IXTQ 22N60P
IXTV 22N60P
IXTV 22N60PS
JM
,
600
Min.
3.0
11...65/2.5...15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
600
600
±30
±40
400
150
300
260
1.0
5.0
22
66
22
40
10
6
±100
250
350
Max.
5.5
25
V/ns
N/lb
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
J
g
TO-3P (IXTQ)
PLUS220 (IXTV)
PLUS220SMD (IXTV_S)
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G
DS (on)
DSS
G
G = Gate
S = Source
D
D
G
S
S
S
= 600
=
≤ ≤ ≤ ≤ ≤ 350 mΩ Ω Ω Ω Ω
D = Drain
TAB = Drain
22
DS99250E(12/05)
D (TAB)
D (TAB)
(TAB)
A
V
Related parts for IXTQ22N60P
IXTQ22N60P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2005 IXYS All rights reserved IXTQ 22N60P IXTV 22N60P IXTV 22N60PS Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.0 ≤ DSS 400 -55 ... +150 150 -55 ...
... A/µ 100V PLUS220SMD (IXTV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. Max. ...
... V - Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3 2 10V GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2005 IXYS All rights reserved 45 = 10V 7. 3.4 3.1 2.8 2.5 2.2 6.5V 1.9 1.6 6V 1.3 1 5.5V 0 º ...
... T = 125 0.4 0.5 0.6 0 olts S D Fig. 11. Capacitance 10000 f = 1MH z 1000 100 olts D S IXYS reserves the right to change limits, test conditions, and dimensions 6 º 0.8 0.9 1 1.1 100 C iss C oss IXTQ 22N60P IXTV 22N60P IXTV 22N60PS Fig. 8. Trans conductance º ...
... Fig . © 2005 IXYS All rights reserved millis IXTQ 22N60P IXTV 22N60P IXTV 22N60PS ...
Related keywords
ixtq28n15p ixtq26p20p ixtq26n60p ixtq26n50p ixtq22n60p ixtq22n50p ixtq200n10t IXTQ22N60P datasheet IXTQ22N60P data sheet IXTQ22N60P pdf datasheet IXTQ22N60P component IXTQ22N60P part IXTQ22N60P distributor IXTQ22N60P RoHS IXTQ22N60P datasheet download