IRFBA1404PPBF International Rectifier, IRFBA1404PPBF Datasheet

IRFBA1404PPBF

Manufacturer Part Number

IRFBA1404PPBF

Description

MOSFET N-CH 40V 206A SUPER-220

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFBA1404PPBF.pdf (10 pages)

Specifications of IRFBA1404PPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3.7 mOhm @ 95A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

206A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

200nC @ 10V

Input Capacitance (ciss) @ Vds

7360pF @ 25V

Power - Max

300W

Mounting Type

Through Hole

Package / Case

Super-220™-3 (Straight Leads)

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

206 A

Power Dissipation

300 W

Mounting Style

Through Hole

Gate Charge Qg

160 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFBA1404PPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFBA1404PPBF

Manufacturer:

STM

Quantity:

3 257

Company:

H&T Electronics

Part Number:

IRFBA1404PPBF

Quantity:

9 000

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Typical Applications

Benefits

Description

This Stripe Planar design of HEXFET

processing techniques to achieve extremely low on-resistance per silicon area.

Additional features of this MOSFET are a 175

ture, fast switching speed and improved ruggedness in single and repetitive

avalanche. The Super-220

same mechanical outline and pinout as the industry standard TO-220 but can

house a considerably larger silicon die. The result is significantly increased

current handling capability over both the TO-220 and the much larger TO-247

package. The combination of extremely low on-resistance silicon and the

Super-220

multiparalled TO-220 applications, reduce system power dissipation, upgrade

existing designs or have TO-247 performance in a TO-220 outline.

These benefits make this design an extremely efficient and reliable device for

use in a wide variety of applications.

dv/dt

STG

@ T

Industrial Motor Drive

Advanced Process Technology

Ultra Low On-Resistance

Increase Current Handling Capability

175°C Operating Temperature

Fast Switching

Dynamic dv/dt Rating

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

= 25°C

= 100°C

= 25°C

package makes it ideal to reduce the component count in

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Recommended clip force

is a package that has been designed to have the

Parameter

Power MOSFETs utilizes the latest

C junction operating tempera-

@ 10V

IRFBA1404PPbF

See Fig.12a, 12b, 14, 15

300 (1.6mm from case )

HEXFET

-40 to + 175

-55 to + 175

206†

145†

Max.

650

300

± 20

480

2.0

5.0

Power MOSFET

DS(on)

DSS

= 206A†

PD - 95903A

= 3.7mΩ

= 40V

09/22/10

Units

W/°C

V/ns

°C

Related parts for IRFBA1404PPBF

IRFBA1404PPBF Summary of contents

Page 1

... Repetitive Avalanche Energy AR dv/dt Peak Diode Recovery dv/dt ƒ T Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Recommended clip force www.irf.com IRFBA1404PPbF G Power MOSFETs utilizes the latest ® C junction operating tempera 10V GS @ 10V 95903A ® HEXFET ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° ...

Page 4

1MHz iss rss gd 10000 oss ds gd 8000 C iss 6000 4000 C oss 2000 ...

Page 5

LIMITED BY PACKAGE 180 120 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 0.01 ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

Duty Cycle = Single Pulse 0.01 100 0.05 0. 1.0E-08 1.0E-07 1.0E-06 Fig 14. Typical Avalanche Current Vs.Pulsewidth 500 TOP Single Pulse BOTTOM 10% Duty Cycle 95A 400 300 200 100 ...

Page 8

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 16. For N-Channel 8 + • • ƒ • - „ • • ...

Page 9

A 10.00 [.394] 1.50 [.059] 0.50 [.020] 15.00 [.590] 14.00 [.552 4.00 [.157] 14.50 [.570] 3.50 [.138] 13.00 [.512] 1.30 [.051] 3X 0.90 [.036] 2.55 [.100] 0.25 [.010] 2X Notes: Repetitive rating; pulse width ...

Page 10

... Super-220 (TO-273AA) Part Marking Information EXAMPLE: THIS IS AN IRFBA22N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" not recommended for surface mount application Notes: 1 ...

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