IRFB4215PBF International Rectifier, IRFB4215PBF Datasheet - Page 4

MOSFET N-CH 60V 115A TO-220AB

IRFB4215PBF

Manufacturer Part Number
IRFB4215PBF
Description
MOSFET N-CH 60V 115A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFB4215PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 54A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
115A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
4080pF @ 25V
Power - Max
270W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
115A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
9mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
9 m Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
115 A
Power Dissipation
270 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
110 ns
Gate Charge Qg
113.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
160 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB4215PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB4215PBF
Manufacturer:
NEC
Quantity:
4 600
4
7000
6000
5000
4000
3000
2000
1000
1000
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T = 175 C
J
V
V
DS
SD
Forward Voltage
V
C
C
C
0.5
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
0V,
C
C
C
gs
gd
ds
C oss
C iss
C rss
+ C
+ C
T = 25 C
1.0
10
J
f = 1MHz
gd ,
gd
°
C
ds
1.5
SHORTED
V
GS
= 0 V
100
2.0
10000
1000
100
0.1
10
20
16
12
Fig 8. Maximum Safe Operating Area
1
8
4
0
0
1
Fig 6. Typical Gate Charge Vs.
I =
D
Tc = 25°C
Tj = 175°C
Single Pulse
64A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
40
Q , Total Gate Charge (nC)
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
80
V
V
V
DS
DS
DS
= 48V
= 30V
= 12V
120
FOR TEST CIRCUIT
SEE FIGURE
100
10msec
100µsec
1msec
www.irf.com
160
13
1000
200

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