IXTV18N60P IXYS, IXTV18N60P Datasheet - Page 5

• Manufacturer Part Number: IXTV18N60P
• Description: MOSFET N-CH 600V 18A PLUS220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTV18N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 420 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: PLUS-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.42 Ohms
• Forward Transconductance Gfs (max / Min): 16 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 18
• Rds(on), Max, Tj=25°c, (?): 0.42
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 49
• Trr, Typ, (ns): 500
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.35
• Package Style: PLUS220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTQ 18N60P
IXTV 18N60P IXTV 18N60PS
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
0.010
0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
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