IXTV22N50PS IXYS, IXTV22N50PS Datasheet - Page 2
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IXTV22N50PS
Manufacturer Part Number
IXTV22N50PS
Description
MOSFET N-CH 500V 22A PLUS220-SMD
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXTQ22N50P.pdf
(5 pages)
Specifications of IXTV22N50PS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2630pF @ 25V
Power - Max
350W
Mounting Type
Surface Mount
Package / Case
PLUS-220SMD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Forward Transconductance Gfs (max / Min)
20 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
350 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.27
Ciss, Typ, (pf)
2880
Qg, Typ, (nc)
50
Trr, Typ, (ns)
400
Pd, (w)
350
Rthjc, Max, (k/w)
0.35
Package Style
PLUS220SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
Symbol
I
I
V
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
d(on)
r
d(off)
f
rr
one or moreof the following U.S. patents:
fs
SD
iss
oss
rss
thJC
thCS
thCS
g(on)
gs
gd
Test Conditions
V
V
V
R
V
(TO-247)
(TO-3P)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
I
F
F
DS
GS
GS
GS
GS
G
= I
= 22 A, -di/dt = 100 A/μs, V
= 20 V; I
= 10 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
DS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
D25
, pulse test
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 I
= I
GS
(T
(T
D25
= 0 V
J
J
5,049,961
5,063,307
5,187,117
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
2630
Typ.
Typ.
0.21
0.21
310
400
20
27
25
27
75
21
50
16
18
6,162,665
6,259,123 B1
6,306,728 B1
0.35 K/W
Max.
Max.
1.5
16
55
K/W
K/W
6,404,065 B1
6,534,343
6,583,505
IXTV 22N50P IXTV 22N50PS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
IXTH 22N50P IXTQ 22N50P
TO-247 (IXTH) Outline
TO-3P (IXTQ) Outline
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
1
.4
6,727,585
6,759,692
6,771,478 B2
3 - Source
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Tab - Drain
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216