IXTH130N15T IXYS, IXTH130N15T Datasheet - Page 4

• Manufacturer Part Number: IXTH130N15T
• Description: MOSFET N-CH 150V 130A TO-247
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXTH130N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 113nC @ 10V
• Input Capacitance (ciss) @ Vds: 9800pF @ 25V
• Power - Max: 750W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 130
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 9800
• Qg, Typ, (nc): 113
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 750
• Rthjc, Max, (k/w): 0.20
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
300
250
200
150
100
180
160
140
120
100
100
50
80
60
40
20
0
0
0.4
3.5
0
f = 1 MHz
0.5
5
4
Fig. 9. Forward Voltage Drop of
0.6
T
10
Fig. 7. Input Admittance
J
4.5
T
= 150ºC
Fig. 11. Capacitance
J
0.7
= 150ºC
- 40ºC
Intrinsic Diode
15
25ºC
V
GS
V
V
5
0.8
SD
DS
- Volts
- Volts
20
- Volts
0.9
5.5
T
J
= 25ºC
25
C oss
C rss
C iss
1
6
30
1.1
6.5
35
1.2
1.3
40
7
1.00
0.10
0.01
160
140
120
100
80
60
40
20
10
0
9
8
7
6
5
4
3
2
1
0
0.0001
0
0
V
I
I
D
G
DS
20
= 25A
= 10mA
Fig. 12. Maximum Transient Thermal
= 75V
20
0.001
40
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
Pulse Width - Seconds
40
Q
G
0.01
Impedance
80
I
- NanoCoulombs
D
- Amperes
100
60
120
0.1
IXTQ130N15T
IXTH130N15T
80
140
T
J
= - 40ºC
150ºC
160
1
25ºC
100
180
120
200
10