IXFH12N80P IXYS, IXFH12N80P Datasheet

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IXFH12N80P

Manufacturer Part Number
IXFH12N80P
Description
MOSFET N-CH 800V 12A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFH12N80P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
51nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
0.85
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
51
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
360
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH12N80P
Manufacturer:
IXYS
Quantity:
35 500
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
© 2006 IXYS All rights reserved
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GS
GSM
AR
AS
D
SOLD
C
d
J
DSS
= 25 C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Test Conditions
T
T
Continuous
Tranisent
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247, TO-3P)
Mounting force
PLUS220 & PLUS220SMD
T0-3P
TO-247
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
TM
= 0 V, I
= V
= 30 V, V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
GS
, di/dt
DSS
HiPerFET
, I
D
D
D
= 250 A
= 2.5 mA
= 0.5 I
G
DS
100 A/ s, V
= 5
= 0 V
(PLUS220,PLUS220SMD) 11..65/2.5..15
D25
GS
, Note 1
= 1 M
DD
T
J
= 125 C
V
DSS
IXFH12N80P
IXFQ12N80P
IXFV12N80P
IXFV12N80PS
JM
,
800
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
800
800
360
150
300
260
0.8
4.0
5.5
6.0
30
40
12
36
30
10
6
0.85
100
250
Max.
5.5
25
N/lb.
V/ns
mJ
nA
W
V
V
A
A
C
C
C
C
C
V
V
V
V
A
A
A
g
g
g
J
TO-247 (IXFH)
TO-3P (IXFQ)
PLUS220 (IXFV)
PLUS220 SMD (IXFV...S)
Features
Advantages
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DSS
DS(on)
G = Gate
S = Source
G
G
D
D
G
S
S
S
= 800
=
0.85
250 ns
D (TAB)
D = Drain
TAB = Drain
12
D (TAB)
DS99476E(07/06)
D (TAB)
D (TAB)
A
V

Related parts for IXFH12N80P

IXFH12N80P Summary of contents

Page 1

... 2.5 mA GS(th GSS DSS DS DSS 0.5 I DS(on D25 © 2006 IXYS All rights reserved IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS Maximum Ratings 800 = 1 M 800 0 DSS 360 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. 4.0 5.5 6.0 Characteristic Values Min. Typ. 800 3.0 ...

Page 2

... D25 19 0.35 0.21 Characteristic Values ( unless otherwise specified) J Min. Typ. Max. 200 250 0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS TO-247 (IXFH) Outline Terminals Gate Source Dim. Millimeter nC Min. Max. A 4.7 5 2.2 2 ...

Page 3

... º C 2.6 2.4 7V 2.2 6V 1.8 1.6 1.4 1.2 5V 0.8 0 º 125 º IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS Fig. 2. Exte nde d Output Char acte r is tics º 10V olts D S Fig Norm alize d to 0.5 I DS( alue vs . Junction atur 10V 12A -50 - Degrees Centigrade J Fig ...

Page 4

... olts D S IXYS reserves the right to change limits, test conditions, and dimensions 5.5 6 6.5 10 º C º 0.8 0.9 1 1.1 C iss C oss C rss IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS Fig ans conductance º - º º 125 mperes D Fig. 10. Gate Char 400V 10m A ...

Page 5

... PLUS220 (IXFV) Outline © 2006 IXYS All rights reserved Fig. 12. Maximum Transient Thermal Resistance 0.001 0.01 Pulse Width - Seconds PLUS220SMD (IXFV_S) Outline IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS 0 ...

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