IRF7779L2TR1PBF International Rectifier, IRF7779L2TR1PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7779L2TR1PBF
• Description: MOSFET N-CH 150V 375A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7779L2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 6660pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 125 W
• Gate Charge Qg: 97 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7779L2TR1PBFTR

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 6. Typical Transfer Characteristics
100000
10000
Fig 4. Typical Output Characteristics
1000
1000
1000
100
100
100
0.1
10
10
1
1
0.1
3.5
1
TOP
BOTTOM
V DS = 50V
≤ 60μs PULSE WIDTH
4.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4.5
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
5.5V
Ciss
Coss
Crss
1
10
5.0
≤ 60μs PULSE WIDTH
Tj = 25°C
5.5
f = 1 MHZ
6.0
10
100
6.5
T J = 175°C
T J = 25°C
T J = -40°C
7.0
100
7.5
1000
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
14
12
10
10
3.0
2.5
2.0
1.5
1.0
0.5
8
6
4
2
0
Fig 9. Typical Total Gate Charge vs
0.1
0
-60 -40 -20 0
Fig 5. Typical Output Characteristics
I D = 40A
TOP
BOTTOM
I D = 40A
V GS = 10V
20
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
T J , Junction Temperature (°C)
40
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
V DS = 120V
V DS = 75V
V DS = 30V
1
20 40 60 80 100 120 140 160 180
60
≤ 60μs PULSE WIDTH
Tj = 175°C
80
5.5V
10
100
www.irf.com
120
140
100