IRF7464 International Rectifier, IRF7464 Datasheet - Page 3

• Manufacturer Part Number: IRF7464
• Description: MOSFET N-CH 200V 1.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7464

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 730 mOhm @ 720mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7464

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0.01
0.1
10
0.1
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
1
0.1
6.0
TOP
BOTTOM
V
DS
V
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
GS
T = 150 C
J
, Drain-to-Source Voltage (V)
6.5
, Gate-to-Source Voltage (V)
1
°
T = 25 C
7.0
J
6.0V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
°
10
= 50V
7.5
°
8.0
100
Fig 2. Typical Output Characteristics
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
1.2A
V
DS
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
T , Junction Temperature ( C)
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20
40
60
IRF7464
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
6.0V
10
°
V
°
GS
=
10V
3
100