IXTH96N25T IXYS, IXTH96N25T Datasheet - Page 2

• Manufacturer Part Number: IXTH96N25T
• Description: MOSFET N-CH 250V 96A TO-247
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXTH96N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 96A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 6100pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.029 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 96 A
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 96
• Rds(on), Max, Tj=25°c, (?): 0.029
• Ciss, Typ, (pf): 6100
• Qg, Typ, (nc): 114
• Trr, Typ, (ns): 158
• Trr, Max, (ns): -
• Pd, (w): 625
• Rthjc, Max, (k/w): 0.20
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
I
Q
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
PLUS220 (IXTV) Outline
fs
J
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
5 mm or less from the package body.
Pulse test, t ≤ 300ms; duty cycle, d ≤ 2%.
I
V
V
V
Resistive Switching Times
V
R
V
V
Repetitive, pulse width limited by T
I
Test Conditions
Test Conditions
F
F
R
DS
GS
GS
GS
GS
G
= 48A, -di/dt = 250 A/μs
= I
= 100 V,V
PRELIMINARY TECHNICAL INFORMATION
= 10V, V
= 10V, I
= 0V, V
= 10V, V
= 2.5Ω (External)
= 0V
S
, V
GS
= 0V, Note 1
DS
D
DS
GS
DS
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0V
= 0.5 • V
4,835,592
4,881,106
D25
DSS
, Note 1
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 25A
= 0.5 • I
Kelvin test contact location must be
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
50
6,162,665
6,259,123 B1
6,306,728 B1
6100
Typ.
Typ.
0.25
625
114
158
1.8
75
20
22
59
28
33
34
23
82
0.20 °C/W
Max.
300
Max.
1.5
6,404,065 B1
6,534,343
6,583,505
96
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
A
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTH96N25T IXTQ96N25T
TO-247AD Outline
TO-3P (IXTQ) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
ÆP
Q
R
S
Pins: 1 - Gate
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
4.7
2.2
2.2
1.0
3 - Source 4, TAB - Drain
Millimeter
3 - Source
.4
1
7,005,734 B2
7,063,975 B2
21.46
16.26
20.32
Max.
2
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
IXTV96N25T
5.3
2.6
1.4
.8
3
2 - Drain
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216