IRF7805Z International Rectifier, IRF7805Z Datasheet

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... Junction-to-Ambient R θJA Notes  through are on page 10 … www.irf.com V DSS 30V 6.8m:@ Top View @ 10V GS @ 10V Typ. g ––– fg ––– IRF7805Z HEXFET Power MOSFET R max Qg (typ.) DS(on) = 10V 18nC SO-8 Max. Units 30 V ± 120 2.5 W 1.6 0.02 W/° ...

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Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

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PULSE WIDTH Tj = 25°C 0.1 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25° ...

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0V MHZ C iss = SHORTED C rss = oss = Ciss 1000 Coss Crss 100 1 ...

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Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 1 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL ...

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Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage D.U 20V V GS 0.01 Ω Fig 13a. Unclamped Inductive Test Circuit ...

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D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 15. Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA I G Current Sampling Resistors Fig 16. Gate ...

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Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...

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SO-8 Package Details 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME ...

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SO-8 Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  ...