IXTH22N50P IXYS, IXTH22N50P Datasheet - Page 2

• Manufacturer Part Number: IXTH22N50P
• Description: MOSFET N-CH 500V 22A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTH22N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2630pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 22
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 2880
• Qg, Typ, (nc): 50
• Trr, Typ, (ns): 400
• Pd, (w): 350
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
Symbol
I
I
V
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
d(on)
r
d(off)
f
rr
one or moreof the following U.S. patents:
fs
SD
iss
oss
rss
thJC
thCS
thCS
g(on)
gs
gd
Test Conditions
V
V
V
R
V
(TO-247)
(TO-3P)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
I
F
F
DS
GS
GS
GS
GS
G
= I
= 22 A, -di/dt = 100 A/μs, V
= 20 V; I
= 10 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
DS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
D25
, pulse test
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 I
= I
GS
(T
(T
D25
= 0 V
J
J
5,049,961
5,063,307
5,187,117
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
2630
Typ.
Typ.
0.21
0.21
310
400
20
27
25
27
75
21
50
16
18
6,162,665
6,259,123 B1
6,306,728 B1
0.35 K/W
Max.
Max.
1.5
16
55
K/W
K/W
6,404,065 B1
6,534,343
6,583,505
IXTV 22N50P IXTV 22N50PS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
IXTH 22N50P IXTQ 22N50P
TO-247 (IXTH) Outline
TO-3P (IXTQ) Outline
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
1
.4
6,727,585
6,759,692
6,771,478 B2
3 - Source
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Tab - Drain
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216