IXTP18N60PM IXYS, IXTP18N60PM Datasheet - Page 4

• Manufacturer Part Number: IXTP18N60PM
• Description: MOSFET N-CH TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTP18N60PM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 420 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 9.0
• Rds(on), Max, Tj=25°c, (?): 0.42
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 50
• Trr, Typ, (ns): 500
• Pd, (w): 90
• Rthjc, Max, (k/w): 1.39
• Package Style: Overmolded TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
10,000
1,000
100
70
60
50
40
30
20
10
40
35
30
25
20
15
10
10
5
0
0
0.3
3.5
0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
f
0.4
= 1MHz
4.0
5
0.5
10
4.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
J
0.6
= 125ºC
15
- 40ºC
25ºC
V
5.0
T
V
DS
V
J
SD
GS
= 125ºC
- Volts
0.7
- Volts
20
- Volts
5.5
0.8
25
C iss
C oss
C rss
6.0
0.9
30
T
J
= 25ºC
6.5
1.0
35
7.0
1.1
40
0.01
0.1
24
20
16
12
10
10
0.0001
8
4
0
9
8
7
6
5
4
3
2
1
0
1
0
0
V
I
I
Fig. 12. Maximum Transient Thermal Impedance
D
G
4
DS
5
= 9A
= 10mA
= 300V
0.001
10
8
Fig. 8. Transconductance
12
15
T
J
= - 40ºC
Fig. 10. Gate Charge
Pulse Width - Seconds
Q
0.01
16
20
G
- NanoCoulombs
25ºC
I
D
IXTP18N60PM
- Amperes
125ºC
25
20
0.1
30
24
35
28
IXYS REF: F_18N60P(63)8-21-06-B
40
32
1
45
36
50
10
40