IRL3713SPBF International Rectifier, IRL3713SPBF Datasheet

MOSFET N-CH 30V 260A D2PAK

IRL3713SPBF

Manufacturer Part Number
IRL3713SPBF
Description
MOSFET N-CH 30V 260A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRL3713SPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
260A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 4.5V
Input Capacitance (ciss) @ Vds
5890pF @ 15V
Power - Max
330W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Current, Drain
260 A
Gate Charge, Total
75 nC
Package Type
D2Pak
Polarization
N-Channel
Power Dissipation
330 W
Resistance, Drain To Source On
2.6 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
40 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
76 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Forward, Diode
0.8 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.003Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
260A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Benefits
l
l
l
www.irf.com
* R
l
l
l
l
Notes  through
Applications
V
V
I
I
I
P
P
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
DS
GS
D
D
θJC
qCS
θJA
θJA
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
, T
and Current
@ T
@ T
θJC
Computer Processor Power
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
Converters with Synchronous Rectification
for Telecom and Industrial Use
High Frequency Isolated DC-DC
High Frequency Buck Converters for
100% R
Lead-Free
@T
@Tc = 100°C Maximum Power Dissipation
Symbol
STG
Symbol
(end of life) for D
C
C
C
= 25°C
= 100°C Continuous Drain Current, V
= 25°C
G
Tested
DS(on)
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
2
Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
are on page 11
at 4.5V V
Parameter
Parameter
i
GS
fi
SMPS MOSFET
GS
GS
@ 10V
@ 10V
gi
f
IRL3713PbF
TO-220AB
V
30V
DSS
Typ
0.50
–––
–––
–––
R
HEXFET Power MOSFET
-55 to +175
DS(on)
1040
3.0@V
Max
180
IRL3713SPbF
± 20
260
330
170
2.2
30
h
h
h
D
IRL3713SPbF
IRL3713LPbF
2
max (mW)
GS
Pak
IRL3713PbF
0.45*
Max
–––
62
40
= 10V
IRL3713LPbF
PD - 97011B
TO-262
260A†
Units
Units
W/°C
°C/W
°C
W
V
V
A
I
D
1

Related parts for IRL3713SPBF

IRL3713SPBF Summary of contents

Page 1

... PD - 97011B IRL3713PbF IRL3713SPbF IRL3713LPbF HEXFET Power MOSFET R max (mW) I DS(on) D 3.0@V = 10V 260A† Pak TO-262 IRL3713SPbF IRL3713LPbF Max Units 30 V ± 260 h 180 A h 1040 330 W 170 2.2 W/°C -55 to +175 °C Max Units 0 ...

Page 2

IRL3713/S/LPbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 10V 8.0V 6.0V 4.5V 4.0V 3.3V 100 2.8V BOTTOM 2. 2.5V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° ...

Page 4

IRL3713/S/LPbF 100000 0V, C iss = rss = oss = 10000 Ciss Coss Crss 1000 100 ...

Page 5

LIMITED BY PACKAGE 250 200 150 100 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE ...

Page 6

IRL3713/S/LPbF D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ • ...

Page 8

IRL3713/S/LPbF Y6HQG ) UCDTÃDTÃ6IÃDSA  Ã GPUÃ8P9 Ã &'( 6TT H7G 9ÃPIÃXXÃ (Ã ((& DIÃUC Ã6TT H7G`ÃGDI ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" 8 DIU SI6UDPI6G S 8UDAD S GPBP 6TT H7G` GPUÃ8P9 Q6SUÃIVH7 S 96U Ã8P9 ...

Page 9

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ 5 www.irf.com DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃPQUDPI6G 6TT@H7G` `@6SÃÃ2Ã! GPUÃ8P @ X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P @ IRL3713/S/LPbF Q6SUÃIVH7@S 6U@Ã8P @ ...

Page 10

IRL3713/S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information OR 10 www.irf.com ...

Page 11

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. Notes: 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.  ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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