IXTQ22N50P IXYS, IXTQ22N50P Datasheet - Page 4
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IXTQ22N50P
Manufacturer Part Number
IXTQ22N50P
Description
MOSFET N-CH 500V 22A TO-3P
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXTQ22N50P.pdf
(5 pages)
Specifications of IXTQ22N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2630pF @ 25V
Power - Max
350W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Forward Transconductance Gfs (max / Min)
20 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
350 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.27
Ciss, Typ, (pf)
2880
Qg, Typ, (nc)
50
Trr, Typ, (ns)
400
Pd, (w)
350
Rthjc, Max, (k/w)
0.35
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTQ22N50P
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXTQ22N50P
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTQ22N50P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
35
30
25
20
15
10
70
60
50
40
30
20
10
10
5
0
0
3.5
0.4
0
T
J
0.5
f = 1MHz
5
4
= 125
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
-40
Fig. 9. Source Current vs.
Source-To-Drain Voltage
25
10
T
º
º
º
4.5
0.6
J
C
C
C
= 125
C rss
V
V
15
C oss
V
G S
S D
º
0.7
D S
5
C iss
C
- Volts
- Volts
20
- Volts
5.5
0.8
25
T
0.9
6
J
30
= 25
º
6.5
C
1
35
1.1
40
7
100
40
35
30
25
20
15
10
10
10
5
0
1
9
8
7
6
5
4
3
2
1
0
10
0
0
T
J
T
T
V
I
I
IXTV 22N50P IXTV 22N50PS
= -40
D
G
J
C
R
125
DS
5
IXTH 22N50P IXTQ 22N50P
5
= 11A
= 10mA
= 150ºC
25
DS(on)
= 25ºC
Fig. 8. Transconductance
º
= 250V
º
º
10
C
C
C
Fig. 10. Gate Charge
10
Fig. 12. Forw ard-Bias
Safe Operating Area
Limit
Q
15
G
15
I
- nanoCoulombs
D
V
20
- Amperes
D S
DC
100
20
25
- Volts
30
25
35
30
40
35
100µs
1ms
25µs
10ms
45
1000
40
50