IXTP3N50D2 IXYS, IXTP3N50D2 Datasheet - Page 5

• Manufacturer Part Number: IXTP3N50D2
• Description: MOSFET N-CH 500V 3A TO200AB
• Manufacturer: IXYS

Specifications of IXTP3N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Gate Charge (qg) @ Vgs: 40nC @ 5V
• Input Capacitance (ciss) @ Vds: 1070pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Vds, Max, (v): 500
• Id(on), Min, (a): 3
• Rds(on), Max, (?): 1.5
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 1070
• Crss, Typ, (pf): 24
• Qg, Typ, (nc): 40
• Pd, (w): 125
• Rthjc, Max, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

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10,000
100.0
10.00
1,000
10.0
2.00
1.00
0.10
0.01
100
1.0
0.1
10
0.00001
10
0
T
T
Single Pulse
f
J
C
R
= 1 MHz
= 150ºC
= 25ºC
DS(on)
5
Fig. 15. Forward-Bias Safe Operating Area
Limit
10
Fig. 13. Capacitance
0.0001
15
@ T
V
V
DS
DS
C
100
- Volts
20
- Volts
= 25ºC
C iss
C oss
C rss
25
Fig. 17. Maximum Transient Thermal Impedance
0.001
Fig. 17. Maximum Transient Thermal Impedance
30
DC
35
25µs
100µs
100ms
1ms
10ms
Pulse Width - Seconds
1,000
40
0.01
100.0
10.0
1.0
0.1
-1
-2
-3
-4
-5
5
4
3
2
1
0
10
0
T
T
Single Pulse
V
I
I
R
J
C
D
G
DS
DS(on)
= 150ºC
= 1.5A
= 10mA
= 75ºC
5
= 250V
Fig. 16. Forward-Bias Safe Operating Area
Limit
10
0.1
Fig. 14. Gate Charge
15
Q
G
@ T
- NanoCoulombs
V
DS
100
- Volts
20
C
= 75ºC
25
1
IXTP3N50D2
IXTA3N50D2
30
DC
IXYS REF: T_3N50D2(3C)8-17-09-A
35
25µs
100µs
1ms
10ms
100ms
1,000
10
40