IXTQ42N25P IXYS, IXTQ42N25P Datasheet - Page 4

no-image

IXTQ42N25P

Manufacturer Part Number
IXTQ42N25P
Description
MOSFET N-CH 250V 42A TO-3P
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXTQ42N25P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
84 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2300pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.084 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
42 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
42
Rds(on), Max, Tj=25°c, (?)
0.084
Ciss, Typ, (pf)
2300
Qg, Typ, (nc)
70
Trr, Typ, (ns)
200
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTQ42N25P
Manufacturer:
IXYS
Quantity:
5 000
Part Number:
IXTQ42N25P
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTQ42N25P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
120
105
100
70
60
50
40
30
20
10
90
75
60
45
30
15
10
0
0
0.4
4
0
4.5
T
f = 1MHz
J
5
= 125ºC
0.6
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
-40ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
T
25ºC
5
J
10
= 125ºC
5.5
V
V
15
0.8
V
G S
S D
D S
6
- Volts
- Volts
20
- Volts
6.5
T
J
1
25
= 25ºC
7
30
7.5
C oss
C rss
1.2
C iss
35
8
8.5
1.4
40
1000
100
10
30
27
24
21
18
15
12
10
1
9
6
3
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
R
J
V
I
I
DS(on)
D
G
= -40ºC
10
DS
125ºC
= 21A
= 10mA
10
IXTA 42N25P IXTP 42N25P
25ºC
Fig. 8. Transconductance
= 125V
20
Limit
Fig. 10. Gate Charge
Fig. 12. Forw ard-Bias
Safe Operating Area
20
Q
DC
30
G
I
- nanoCoulombs
V
D
30
D S
- Amperes
40
100
- Volts
50
40
IXTQ 42N25P
60
50
100µs
1ms
T
T
25µs
10ms
70
J
C
= 150ºC
= 25ºC
60
80
1000
90
70

Related parts for IXTQ42N25P