IRF5210LPBF International Rectifier, IRF5210LPBF Datasheet

IRF5210LPBF

Manufacturer Part Number

IRF5210LPBF

Description

MOSFET P-CH 100V 38A TO-262

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF5210STRRPBF.pdf (10 pages)

2.IRF5210LPBF.pdf (3 pages)

Specifications of IRF5210LPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

60 mOhm @ 38A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

38A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

230nC @ 10V

Input Capacitance (ciss) @ Vds

2780pF @ 25V

Power - Max

3.1W

Mounting Type

Through Hole

Package / Case

TO-262-3 (Straight Leads)

Channel Type

Current, Drain

-40 A

Gate Charge, Total

180 nC

Package Type

TO-262

Polarization

P-Channel

Power Dissipation

200 W

Resistance, Drain To Source On

0.06 Ohm

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

79 ns

Time, Turn-on Delay

17 ns

Transconductance, Forward

10 S

Voltage, Breakdown, Drain To Source

-100 V

Voltage, Drain To Source

–100 V

Voltage, Forward, Diode

-1.6 V

Voltage, Gate To Source

±20 V

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 40 A

Mounting Style

Through Hole

Gate Charge Qg

120 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF5210LPBF

Manufacturer:

International Rectifier

Quantity:

135

Current page: 1 of 3
Download datasheet (177Kb)

Description

Absolute Maximum Ratings

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in

any existing surface mount package. The D

for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a

typical surface mount application.

The through-hole version (IRF5210L) is available for low-

profile applications.

dv/dt

STG

@ T

Advanced Process Technology

Surface Mount (IRF5210S)

Low-profile through-hole (IRF5210L)

175°C Operating Temperature

Fast Switching

P-Channel

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Parameter

Pak is suitable

@ -10V

300 (1.6mm from case )

Typ.

–––

D P ak

HEXFET

-55 to + 175

IRF5210S/L

Max.

-140

-5.0

200

± 20

780

-40

-29

-21

3.8

1.3

T O -26 2

Power MOSFET

DS(on)

Max.

0.75

DSS

= -40A

PD - 91405C

= -100V

= 0.06

Units

W/°C

V/ns

°C/W

°C

Related parts for IRF5210LPBF

IRF5210LPBF Summary of contents

Page 1

... Fast Switching P-Channel Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF5210S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

Package Outline TO-262 Outline Part Marking Information TO-262 IRF5210S/L ...

Related keywords

irf520
irf520n
irf5210
irf521
irf5210l
irf5210spbf
irf5210pbf
IRF5210LPBF datasheet
IRF5210LPBF data sheet
IRF5210LPBF pdf datasheet
IRF5210LPBF component
IRF5210LPBF part
IRF5210LPBF distributor
IRF5210LPBF RoHS
IRF5210LPBF datasheet download