IXTA60N20T IXYS, IXTA60N20T Datasheet - Page 3

• Manufacturer Part Number: IXTA60N20T
• Description: MOSFET N-CH 200V 60A TO-263
• Manufacturer: IXYS
• Series: Trench™r

Specifications of IXTA60N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 73nC @ 10V
• Input Capacitance (ciss) @ Vds: 4530pF @ 25V
• Power - Max: 400W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.04
• Ciss, Typ, (pf): 4530
• Qg, Typ, (nc): 73
• Trr, Typ, (ns): 118
• Trr, Max, (ns): -
• Pd, (w): 500
• Rthjc, Max, (k/w): 0.3
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0.0
0
0
V
GS
0.2
0.5
20
= 10V
Fig. 5. R
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.4
1.0
40
DS(on)
0.6
1.5
60
Normalized to I
I
0.8
2.0
80
D
V
Drain Current
V
DS
DS
- Amperes
- Volts
- Volts
100
2.5
V
1
V
GS
GS
= 15V
= 15V
10V
7V
120
1.2
3.0
10V
8V
D
T
6V
5V
4V
J
= 30A Value vs.
= 175ºC
140
1.4
3.5
T
7V
6V
5V
J
J
= 25ºC
J
= 150ºC
= 25ºC
1.6
4.0
160
1.8
4.5
180
5.0
200
2
200
180
160
140
120
100
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
70
60
50
40
30
20
10
80
60
40
20
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
2
-25
-25
Fig. 4. R
= 10V
4
Fig. 6. Maximum Drain Current vs.
0
0
IXTA60N20T IXTP60N20T
DS(on)
V
6
T
T
GS
Junction Temperature
C
25
J
25
- Degrees Centigrade
Case Temperature
- Degrees Centigrade
= 15V
Normalized to I
10V
8
V
DS
50
50
8V
7V
6V
5V
- Volts
10
75
75
12
D
= 30A Value vs.
I
100
100
IXTQ60N20T
D
= 60A
14
125
125
16
I
D
J
= 30A
= 25ºC
150
150
18
175
175
20