IRF6646 International Rectifier, IRF6646 Datasheet - Page 2

• Manufacturer Part Number: IRF6646
• Description: MOSFET N-CH 80V 12A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6646

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4.9V @ 150µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2060pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MN
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.5 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 12 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 20 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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‚
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Notes:
IRF6646
∆ΒV
∆V
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
Q
Q
Q
Q
G
iss
oss
rss
oss
oss
g
sw
oss
rr
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by max. junction temperature.
Thermally limited and used R
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
θja
to calculate.
Parameter
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
–––
80
17
2060
2180
0.10
–––
–––
–––
–––
–––
–––
–––
480
120
310
–––
–––
–––
7.6
-11
7.6
2.0
1.0
36
12
14
14
18
17
20
31
12
36
48
2.5e
-100
–––
–––
––– mV/°C
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.5
4.9
1.3
20
50
96
54
72
V/°C
mΩ
µA
nA
nC
nC
nC
ns
pF
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 17
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs c
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
GS
GS
G
= 7.2A
= 7.2A
=6.2Ω
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= V
= 80V, V
= 64V, V
= 20V
= -20V
= 10V, I
= 40V
= 10V
= 16V, V
= 40V, V
= 0V
= 25V
= 0V, V
= 0V, V
GS
, I
Conditions
D
Conditions
D
DS
DS
S
F
D
D
= 250µA
GS
GS
GS
GS
= 7.2A, V
= 7.2A, V
= 150µA
= 7.2A
= 12A c
= 1.0V, f=1.0MHz
= 64V, f=1.0MHz
= 0V
= 0V, T
= 0V
= 10V c
D
www.irf.com
= 1mA
DD
GS
J
= 125°C
= 40V
= 0V c