IRF1405STRLPBF International Rectifier, IRF1405STRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF1405STRLPBF
• Description: MOSFET N-CH 55V 131A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1405STRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 131A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 5480pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 131 A
• Gate Charge, Total: 170 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 4.6 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 130 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 69 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 131A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 131 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 170 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF1405STRLPBF; IRF1405STRLPBFTR

100000
10000
4
1000
100
1000
100
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T = 175 C
J
V
V DS , Drain-to-Source Voltage (V)
0.5
SD
Forward Voltage
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
1.0
T = 25 C
J
Coss
Ciss
Crss
1.5
10
°
f = 1 MHZ
2.0
V
GS
SHORTED
2.5
= 0 V
3.0
100
10000
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C
= 175 C
101A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
DS
60
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
120
BY R
V
V
10
DS
DS
DS(on)
= 44V
= 27V
FOR TEST CIRCUIT
180
SEE FIGURE
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240
10us
100us
1ms
10ms
13
100
300