IRF6797MTRPBF International Rectifier, IRF6797MTRPBF Datasheet

MOSFET N-CH 25V 36A DIRECTFET-MX

IRF6797MTRPBF

Manufacturer Part Number
IRF6797MTRPBF
Description
MOSFET N-CH 25V 36A DIRECTFET-MX
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6797MTRPBF.pdf (9 pages)

Specifications of IRF6797MTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.4 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
2.35V @ 150µA
Gate Charge (qg) @ Vgs
68nC @ 4.5V
Input Capacitance (ciss) @ Vds
5790pF @ 13V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.4 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
210 A
Power Dissipation
89 W
Gate Charge Qg
45 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF6797MTRPBF
Manufacturer:
IR
Quantity:
20 000
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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Description
The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6797MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6797MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.

‚
ƒ
www.irf.com
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
DM
AR
DS
GS
AS
RoHs Compliant Containing No Lead and Bromide 
Integrated Monolithic Schottky Diode
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible 
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Ideal for CPU Core DC-DC Converters
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques 
100% Rg tested
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
SQ
Fig 1. Typical On-Resistance vs. Gate Voltage
A
A
C
4
3
2
1
0
= 25°C
= 70°C
= 25°C
0
2
SX
V GS, Gate -to -Source Voltage (V)
4
T J = 25°C
6
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ST
8
10
12
T J = 125°C
14
Ãg
g
I D = 36A
16
Parameter
GS
GS
GS
18
MQ
@ 10V
@ 10V
@ 10V
h
20
f
HEXFET
MX
„
…
†
Q
25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
45nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
g tot
C
DSS
measured with thermocouple mounted to top (Drain) of part.
14.0
12.0
10.0
®
8.0
6.0
4.0
2.0
0.0
MT
Power MOSFET plus Schottky Diode ‚

0
J
13nC
= 25°C, L = 0.57mH, R
Q
I D = 30A
IRF6797MTRPbF
gd
V
20
GS
MP
MX
Q G Total Gate Charge (nC)
IRF6797MPbF
6.2nC
Q
gs2
40
Max.
V DS = 20V
V DS = 13V
210
300
260
±20
25
36
29
30
R
DS(on)
G
38nC
60
Q
= 25Ω, I
rr
DirectFET™ ISOMETRIC
TM
80
AS
packaging to achieve
38nC
Q
= 30A.
oss
100
R
DS(on)
V
Units
03/16/09
1.8V
mJ
gs(th)
V
A
A
120
1

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IRF6797MTRPBF Summary of contents

Page 1

... Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com IRF6797MTRPbF ® Power MOSFET plus Schottky Diode ‚ HEXFET V DSS 25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤ 60µs PULSE WIDTH 100 150°C ...

Page 5

150° 25° -40° 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward ...

Page 6

DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18. ™ www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied G ...

Page 8

DirectFET™ Part Marking 8 DIMENSIONS METRIC CODE MIN MAX A 0.246 6.25 6.35 B 0.189 4.80 5.05 C 3.85 3.95 0.152 D 0.35 0.45 0.014 0.027 E 0.68 0.72 F 0.72 0.027 0.68 G 1.42 0.054 1.38 H 0.84 ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6797MTRPBF). For 1000 parts on 7" reel, order IRF6797MTR1PBF CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...

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