IXTP1N120P IXYS, IXTP1N120P Datasheet - Page 4

• Manufacturer Part Number: IXTP1N120P
• Description: MOSFET N-CH 1200V 1A TO-220
• Manufacturer: IXYS
• Series: PolarVHV™r

Specifications of IXTP1N120P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 17.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 63W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 63 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 1.0
• Rds(on), Max, Tj=25°c, (?): 20
• Ciss, Typ, (pf): 445
• Qg, Typ, (nc): 17.6
• Trr, Typ, (ns): 900
• Pd, (w): 63
• Rthjc, Max, (k/w): 2.0
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10.0
1.0
0.1
0.0
0.00001
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
9
8
7
6
5
4
3
2
1
0
0
0
T
V
I
I
D
G
J
DS
0.1
= - 40ºC
= 0.5A
= 10mA
2
= 600V
125ºC
25ºC
0.2
4
Fig. 7. Transconductance
0.3
Q
Fig. 9. Gate Charge
0.0001
6
G
- NanoCoulombs
I
D
0.4
- Amperes
8
0.5
10
0.6
Fig. 11. Maximum Transient Thermal Impedance
12
0.7
0.001
14
0.8
0.9
16
Pulse Width - Seconds
18
1
0.01
1,000
100
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
10
1
0.3
0
f = 1 MHz
0.4
5
Fig. 8. Forward Voltage Drop of
0.5
0.1
10
Fig. 10. Capacitance
0.6
Intrinsic Diode
15
V
V
T
DS
SD
J
0.7
= 125ºC
- Volts
- Volts
20
C oss
C iss
C rss
0.8
IXYS REF: T_1N120P(2A-245)10-27-06
1
25
0.9
IXTA1N120P
IXTP1N120P
30
T
1
J
= 25ºC
35
1.1
10
1.2
40