IRF6644 International Rectifier, IRF6644 Datasheet - Page 5

• Manufacturer Part Number: IRF6644
• Description: MOSFET N-CH 100V DIRECTFET-MN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6644

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 10.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10.3A
• Vgs(th) (max) @ Id: 4.8V @ 150µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MN
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.3 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 16 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 26 ns
• Lead Free Status / Rohs Status: No

Fig 12. Maximum Drain Current vs. Ambient Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
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1000.0
100.0
12
10
10.0
8
6
4
2
0
1.0
0.1
25
0.0
V SD , Source-to-Drain Voltage (V)
50
T A , Ambient Temperature (°C)
1.0
T J = 150°C
T J = 25°C
T J = -40°C
75
2.0
Fig 14. Maximum Avalanche Energy Vs. Drain Current
100
3.0
1000
V GS = 0V
800
600
400
200
125
4.0
0
25
Starting T J , Junction Temperature (°C)
150
5.0
50
75
100
TOP
BOTTOM
1000
125
5.0
4.5
4.0
3.5
3.0
2.5
2.0
100
2.8A
3.3A
6.2A
0.1
I D
10
Fig 13. Typical Threshold Voltage vs.
1
-50
0.01
Fig11. Maximum Safe Operating Area
T A = 25°C
Tj = 150°C
Single Pulse
150
-25
Junction Temperature
V DS , Drain-toSource Voltage (V)
T J , Junction Temperature ( °C )
0.10
0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
25
1.00
100msec
50
10msec
10.00
1msec
IRF6644
75
100µsec
100
100.00 1000.00
I D = 1.0A
I D = 1.0mA
I D = 250µA
ID = 150µA
125
5
150