IXTP14N60P IXYS, IXTP14N60P Datasheet - Page 5

• Manufacturer Part Number: IXTP14N60P
• Description: MOSFET N-CH 600V 14A TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTP14N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Forward Transconductance Gfs (max / Min): 13 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 14
• Rds(on), Max, Tj=25°c, (?): 0.55
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 36
• Trr, Typ, (ns): 500
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTA14N60P IXTP14N60P
IXTQ14N60P
Fig. 13. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: F_14N60P(5J)12-22-08-G