IRFS31N20DTRLP International Rectifier, IRFS31N20DTRLP Datasheet - Page 2

• Manufacturer Part Number: IRFS31N20DTRLP
• Description: MOSFET N-CH 200V 31A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS31N20DTRLP

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 3.1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 31A
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 18A, 10V
• Current, Drain: 31 A
• Gate Charge, Total: 70 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.082 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 26 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 56 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 33 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 70 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant