IRF6613 International Rectifier, IRF6613 Datasheet

IRF6613

Manufacturer Part Number

IRF6613

Description

MOSFET N-CH 40V DIRECTFET-MT

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6613.pdf (9 pages)

Specifications of IRF6613

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.4 mOhm @ 23A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

23A

Vgs(th) (max) @ Id

2.25V @ 250µA

Gate Charge (qg) @ Vgs

63nC @ 4.5V

Input Capacitance (ciss) @ Vds

5950pF @ 15V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6613TR1PBF

Manufacturer:

Quantity:

6 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6613TR1PBF

Manufacturer:

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6613TRPBF

Manufacturer:

Quantity:

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Company:

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Part Number:

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Quantity:

9 000

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Notes through ˆ are on page 2

Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)

Description

The IRF6613 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with

existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,

when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided

cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6613 has been optimized for parameters that are critical in synchronous buck converters including

Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613 offers particularly low Rds(on) and high Cdv/dt immunity for synchro-

nous FET applications.

www.irf.com

Absolute Maximum Ratings

Thermal Resistance

STG

θJA

θJC

θJ-PCB

Application Specific MOSFETs

Ideal for Synchronous Rectification in Isolated

DC-DC Converters

Low Conduction Losses

Low Switching Losses

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

@ T

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy

Avalanche Current

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Case

Junction-to-PCB Mounted

Ã™

™

fÃ

Parameter

@ 10V

Ãf

40V

DSS

Typ.

12.5

–––

1.0

4.1mΩ@V

3.4mΩ@V

-40 to + 150

HEXFET

DS(on)

Max.

0.022

150

180

200

±20

2.8

1.8

max

= 4.5V

Max.

= 10V

–––

1.4

IRF6613

packaging to achieve the

DirectFET™ ISOMETRIC

Power MOSFET

Qg(typ.)

42nC

Units

W/°C

°C/W

°C

9/30/05

Related parts for IRF6613

IRF6613 Summary of contents

Page 1

... IMPROVING previous best thermal resistance by 80%. The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 150°C 10 25°C 1 ...

Page 4

150°C 10 25°C 1.0 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 150 120 100 ...

Page 5

Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage D.U 20V GS 0.01 Ω Fig 13a. Unclamped Inductive ...

Page 6

D.U.T + ƒ • • - • + ‚ - R • • • • Fig 17. DirectFET™ Substrate and PCB Layout, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the ...

Page 7

DirectFET™ Outline Dimension, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking www.irf.com CODE A B NOTE: ...

Page 8

... DirectFET™ Tape & Reel Dimension (Showing component orientation). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6613). For 1000 parts on 7" reel, order IRF6613TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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