IXTA60N10T IXYS, IXTA60N10T Datasheet - Page 3
![MOSFET N-CH 100V 60A TO-263](/photos/5/59/55947/ixta60n10t_sml.jpg)
IXTA60N10T
Manufacturer Part Number
IXTA60N10T
Description
MOSFET N-CH 100V 60A TO-263
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet
1.IXTP60N10T.pdf
(5 pages)
Specifications of IXTA60N10T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
2650pF @ 25V
Power - Max
176W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
60 A
Power Dissipation
176 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.0180
Ciss, Typ, (pf)
2650
Qg, Typ, (nc)
49
Trr, Typ, (ns)
59
Trr, Max, (ns)
-
Pd, (w)
176
Rthjc, Max, (k/w)
0.85
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2007 IXYS CORPORATION, All rights reserved
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
60
55
50
45
40
35
30
25
20
15
10
5
0
0.0
0
60
55
50
45
40
35
30
25
20
15
10
Fig. 5. R
5
0
0.2
0.0
V
15
GS
0.1 0.2
0.4
= 10V
Fig. 1. Output Characteristics
30
Fig. 3. Output Characteristics
15V
DS(on)
0.6
- - - -
45
0.3 0.4
vs. Drain Current
0.8
Normalized to I
I
D
60
V
1.0
- Amperes
DS
@ 150ºC
@ 25ºC
V
0.5 0.6
DS
- Volts
V
1.2
V
75
GS
- Volts
GS
= 10V
= 10V
1.4
9V
8V
9V
8V
90
0.7 0.8
1.6
D
T
T
7V
6V
5V
105
J
J
= 30A Value
7V
6V
= 175ºC
= 25ºC
1.8
0.9 1.0
120
2.0
135
2.2
1.1 1.2
150
2.4
200
180
160
140
120
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
65
60
55
50
45
40
35
30
25
20
15
10
80
60
40
20
5
0
0
-50
-50
0
Fig. 6. Drain Current vs. Case Temperature
Fig. 4. R
V
2
Fig. 2. Extended Output Characteristics
GS
-25
-25
= 10V
4
0
0
6
DS(on)
vs. Junction Temperature
T
T
C
J
8
25
- Degrees Centigrade
- Degrees Centigrade
25
Normalized to I
10
V
DS
@ 25ºC
50
50
I
12
- Volts
D
= 60A
14
75
75
V
16
GS
100
100
= 10V
IXTA60N10T
D
I
IXTP60N10T
18
D
9V
8V
7V
6V
= 30A Value
= 30A
125
20
125
22
150
150
24
175
175
26