IXTA60N10T IXYS, IXTA60N10T Datasheet - Page 3

• Manufacturer Part Number: IXTA60N10T
• Description: MOSFET N-CH 100V 60A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA60N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2650pF @ 25V
• Power - Max: 176W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 60 A
• Power Dissipation: 176 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.0180
• Ciss, Typ, (pf): 2650
• Qg, Typ, (nc): 49
• Trr, Typ, (ns): 59
• Trr, Max, (ns): -
• Pd, (w): 176
• Rthjc, Max, (k/w): 0.85
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
60
55
50
45
40
35
30
25
20
15
10
5
0
0.0
0
60
55
50
45
40
35
30
25
20
15
10
Fig. 5. R
5
0
0.2
0.0
V
15
GS
0.1 0.2
0.4
= 10V
Fig. 1. Output Characteristics
30
Fig. 3. Output Characteristics
15V
DS(on)
0.6
- - - -
45
0.3 0.4
vs. Drain Current
0.8
Normalized to I
I
D
60
V
1.0
- Amperes
DS
@ 150ºC
@ 25ºC
V
0.5 0.6
DS
- Volts
V
1.2
V
75
GS
- Volts
GS
= 10V
= 10V
1.4
9V
8V
9V
8V
90
0.7 0.8
1.6
D
T
T
7V
6V
5V
105
J
J
= 30A Value
7V
6V
= 175ºC
= 25ºC
1.8
0.9 1.0
120
2.0
135
2.2
1.1 1.2
150
2.4
200
180
160
140
120
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
65
60
55
50
45
40
35
30
25
20
15
10
80
60
40
20
5
0
0
-50
-50
0
Fig. 6. Drain Current vs. Case Temperature
Fig. 4. R
V
2
Fig. 2. Extended Output Characteristics
GS
-25
-25
= 10V
4
0
0
6
DS(on)
vs. Junction Temperature
T
T
C
J
8
25
- Degrees Centigrade
- Degrees Centigrade
25
Normalized to I
10
V
DS
@ 25ºC
50
50
I
12
- Volts
D
= 60A
14
75
75
V
16
GS
100
100
= 10V
IXTA60N10T
D
I
IXTP60N10T
18
D
9V
8V
7V
6V
= 30A Value
= 30A
125
20
125
22
150
150
24
175
175
26