IXFP12N50PM IXYS, IXFP12N50PM Datasheet - Page 2
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IXFP12N50PM
Manufacturer Part Number
IXFP12N50PM
Description
MOSFET N-CH 500V 6A TO-220
Manufacturer
IXYS
Series
Polar™r
Datasheet
1.IXFP12N50PM.pdf
(5 pages)
Specifications of IXFP12N50PM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
5.5V @ 1mA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1830pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
6
Rds(on), Max, Tj=25°c, (?)
0.5
Ciss, Typ, (pf)
1830
Qg, Typ, (nc)
29
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
50
Rthjc, Max, (ºc/w)
2.5
Package Style
TO-220 Overmolded
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFP12N50PM
Manufacturer:
IXYS
Quantity:
18 000
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
g(on)
gs
gd
RM
I
V
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
F
F
R
DS
GS
GS
GS
GS
G
= 6A, -di/dt = 150A/μs,
= I
= 100V, V
= 10V, I
= 10Ω (External)
= 10V, V
= 0V, V
= 10V, V
= 0V
S
, V
GS
= 0V, Note 1
D
DS
DS
= 6A, Note 1
DS
GS
= 25V, f = 1MHz
= 0.5
= 0.5 V
= 0V
4,835,592
4,881,106
V
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 6A
= 6A
5,049,961
5,063,307
5,187,117
(T
JM
(T
J
J
= 25°C, unless otherwise specified)
= 25°C unless otherwise specified)
5,237,481
5,381,025
5,486,715
7.5
Min.
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
1830
18.2
2.8
182
Typ.
13
16
22
27
65
20
29
11
10
Typ.
300
2.5 °C/W
1.5
12
48
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
A
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOLATED TO-220 (IXFP...M)
6,727,585
6,771,478 B2 7,071,537
IXFP12N50PM
Terminals: 1 - Gate
1 2
7,005,734 B2
7,063,975 B2
3
2 - Drain (Collector)
3 - Source (Emitter)
7,157,338B2