IXKP10N60C5 IXYS, IXKP10N60C5 Datasheet - Page 3
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IXKP10N60C5
Manufacturer Part Number
IXKP10N60C5
Description
MOSFET N-CH 600V 10A TO220AB
Manufacturer
IXYS
Series
CoolMOS™r
Datasheet
1.IXKP10N60C5.pdf
(4 pages)
Specifications of IXKP10N60C5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
385 mOhm @ 5.2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
3.5V @ 340µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
790pF @ 100V
Mounting Type
Through Hole
Package / Case
TO-220AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.385 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10 A
Power Dissipation
109 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
10
Rds(on), Max, Tj=25°c, (?)
0.385
Ciss, Typ, (pf)
790
Qg, Typ, (nc)
17
Trr, Max, (ns)
-
Trr, Typ, (ns)
260
Pd, (w)
109
Rthjc, Max, (k/w)
1.15
Visol, Rms, (v)
-
Package Style
TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXKP10N60C5
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXKP10N60C5M
Manufacturer:
IXYS
Quantity:
18 000
TO-220 AB Outline
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
120
100
80
60
40
20
0
0
Fig. 1 Power dissipation
40
T
C
80
[°C]
120
160
25
20
15
10
5
0
0
Fig. 2 Typ. output characteristics
T
J
= 25°C
5
10 V
20 V
V
DS
10
[V]
7 V
V
8 V
GS
=
6 V
5.5 V
5 V
4.5 V
15
20
16
14
12
10
8
6
4
2
0
0
Fig. 3 Typ. output characteristics
T
J
= 150°C
IXKP 10N60C5
5
V
GS
V
=
DS
10
[V]
20 V
10 V
15
6 V
20090209c
5 V
4.5 V
7 V
3 - 4
5.5 V
8 V
20